| PART |
Description |
Maker |
| V53C832L35 V53C832L40 V53C832L V53C832L30 V53C832L |
High performance 3.3V 256K x 32 EDO page mode CMOS dynamic RAM
HIGH PERFORMANCE 3.3 VOLT 256K X 32 EDO PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic, Corp]
MOSEL[Mosel Vitelic Corp]
|
| ATF22V10 ATF22V10B ATF22V10B-10JC ATF22V10B-10JI A |
High- Performance EE PLD FLASH PLD, 25 ns, PDSO24
High- Performance EE PLD FLASH PLD, 25 ns, PDIP24
Single Supply, Dual SPST Switch FLASH PLD, 15 ns, PDIP24
High- Performance EE PLD FLASH PLD, 15 ns, PDIP24
High- Performance EE PLD FLASH PLD, 15 ns, PDSO24
High- Performance EE PLD FLASH PLD, 10 ns, PDIP24
High- Performance EE PLD FLASH PLD, 15 ns, PQCC28
High- Performance EE PLD FLASH PLD, 10 ns, CQCC28
High- Performance EE PLD FLASH PLD, 15 ns, CDIP24
High- Performance EE PLD FLASH PLD, 7.5 ns, PDIP24
High- Performance EE PLD FLASH PLD, 7.5 ns, PDSO24
High- Performance EE PLD FLASH PLD, 10 ns, PDSO24
3.3V, 1 Output, LVTTL to LVPECL Clock Converter
CAP 470PF 16V 5% X7R SMD-0603 TR-7 PLATED-NI/SN
High-performance EE PLD
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
http://
|
| V53C104 V53C104P-12 V53C104Z-70 V53C104Z-70L V53C1 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
| AT49BV002A AT49BV002AN AT49V002ANT AT49V002AT AT49 |
AT49BV002A(N)(T) [Updated 8/03. 19 Pages] 256K x 8 (2M bit). 2.7-Volt Read and 2.7-Vold Write. Top or Bottom Boot Parametric Block Flash
256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Top Boot Parametric Block Flash
256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Bottom Boot Parametric Block Flash
|
Atmel
|
| AT27BV256 |
256K bit, 2.7-Volt to 3.6-Volt EPROM
|
Atmel
|
| V43644Y04VCTG-75 |
3.3 VOLT 4M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM
|
Mosel Vitelic Corp
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| V58C2128 V58C2128164S V58C2128404S V58C2128804S |
HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM
|
MOSEL[Mosel Vitelic, Corp]
|
| V58C265804S |
HIGH PERFORMANCE 2.5 VOLT 8M X 8 DDR SDRAM 4 BANKS X 2Mbit X 8
|
MOSEL[Mosel Vitelic, Corp]
|
| V53C16258SHT50 V53C16258SH V53C16258SHK50 |
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH
|
MOSEL[Mosel Vitelic, Corp]
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
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